Measurements of the influence of the nd product on the Gunn effect

28 December 1972

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 8 (26) , 640-642
https://doi.org/10.1049/el:19720463

Abstract

Measurements of the effect of the nd product on domain formation in planar Gunn devices on GaAs are reported. Starting at nd = 10¹² cm⁻², the Gunn effect decreases to zero at nd = 10¹¹ cm⁻².

Keywords

GUNN DEVICES
ELECTRIC CURRENT MEASUREMENT
GAAS

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