Self‐Consistent Tight‐Binding Method for Total Energy Calculations of Tetrahedral Semiconductors Including Surfaces and Defects
- 1 October 1985
- journal article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 131 (2) , 643-657
- https://doi.org/10.1002/pssb.2221310226
Abstract
No abstract availableKeywords
This publication has 41 references indexed in Scilit:
- Electronic Relaxation Effects in Core Level Spectra of SolidsPhysica Status Solidi (b), 1982
- Total energies in the tight-binding theoryPhysical Review B, 1981
- Microscopic Theory of the Phase Transformation and Lattice Dynamics of SiPhysical Review Letters, 1980
- Calculation of structurally related properties of bulk and surface SiPhysical Review B, 1980
- Si(100) surfaces: Atomic and electronic structuresJournal of Vacuum Science and Technology, 1979
- Proof thatin density-functional theoryPhysical Review B, 1978
- Low-Energy Electron Diffraction Determination of the Atomic Arrangement on Impurity-Stabilized Unreconstructed Si{111} SurfacesPhysical Review Letters, 1976
- Average-energy-of-configuration Hartree-Fock results for the atoms helium to radon charlotte froese fischerAtomic Data and Nuclear Data Tables, 1972
- Self-Consistent Equations Including Exchange and Correlation EffectsPhysical Review B, 1965
- Inhomogeneous Electron GasPhysical Review B, 1964