A Detailed Study on the Growth of Thin Oxide Layers on Silicon Using Ozonated Solutions

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Abstract
Copper indium disulfide thin films for photovoltaic applications were grown by close‐spaced vapor transport in a vertical reactor closed under vacuum. Solid iodine was used to provide the reagent. Optimal deposition conditions were determined by studying samples deposited on soda‐lime glass with X‐rays, scanning electron microscopy, energy‐dispersive spectroscopy, optical absorption, and Hall effect. The stoichiometry temperature range is relatively large compared to other I‐III‐VI compounds: the lower limit (∼370°) corresponds to the formation of CuI in the layers and the upper limit (∼680°C) is imposed by the glass substrate. No phase change was observed in this temperature range. All the layers are p‐type conducting, with carrier densities of the order of and high mobility values in certain cases. © 2000 The Electrochemical Society. All rights reserved.
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