Excitation mechanisms of rare earth (Yb) luminescence in III-V semiconductors (InP)

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Abstract
Thermal dependent Hall effect and time-resolved band edge photoluminescence on rare earth (Yb) doped indium phosphide are reported. The presence of two different traps related to the rare earth clearly demonstrated A very efficient trapping is observed in time resolved photoluminescence. The variations of the band edge luminescence decay time with temperature and excitation density lead the authors to consider the trapping of both electrons and holes on the rare earth site. They propose a model based on the creation of bound exciton trapped on the rare earth site which allows them to account for both the electrical and optical properties of rare earth in III-V compounds. The reasonable quantitative agreement between this model, time-resolved and cw photoluminescence data is shown and discussed.
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