Importance of the band gap energy and flat band potential for application of modified TiO2 photoanodes in water photolysis
Top Cited Papers
- 7 November 2007
- journal article
- Published by Elsevier in Journal of Power Sources
- Vol. 181 (1) , 46-55
- https://doi.org/10.1016/j.jpowsour.2007.10.082
Abstract
No abstract availableKeywords
This publication has 39 references indexed in Scilit:
- Thin film TiO2 photoanodes for water photolysis prepared by dc magnetron sputteringJournal of Power Sources, 2007
- Absorption edge and internal electric fields in amorphous semiconductorsPublished by Elsevier ,2003
- Transport properties of (Sn,Ti)O2 polycrystalline ceramics and thin filmsSolid State Ionics, 1999
- Photoresponse and AC impedance characterization of n-TiO2 films during hydrogen and oxygen evolution reactions in an electrochemical cellInternational Journal of Hydrogen Energy, 1997
- Highly efficient semiconducting TiO2 photoelectrodes prepared by aerosol pyrolysisElectrochimica Acta, 1995
- Structural and electronic properties of titanium dioxidePhysical Review B, 1992
- Dynamics of interfacial electron-transfer processes in colloidal semiconductor systemsJournal of the American Chemical Society, 1982
- Photoelectronic processes in transition-element doped n-type TiO2 electrodesMaterials Research Bulletin, 1980
- Semiconductor Electrodes: XXIII . The Determination of Flatband Potentials from Differential Stress Measurements with Attached Piezoelectric DetectorsJournal of the Electrochemical Society, 1980
- Spinodal Decomposition in the System TiO2‐SnO2Journal of the American Ceramic Society, 1968