Ga _x In _1−x As _y P _1−y /Ga _x′ ,In _1−x′ ,As _y′ ,P _1−y′ , DH visible LED grown on (100) GaAs by LPE in the range of 670–680 nm

8 July 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (14) , 602-603
https://doi.org/10.1049/el:19820413

Abstract

Ga_xIn_1−xAs_yP_1−y/Ga_x′,In_1−x′,As_y′,P_1−y′ visible light emission diodes (LED) are reported. The double heterostructures were grown on (100) GaAs substrates by a liquid phase epitaxial (LPE) growth technique from a source melt rich in phosphorus. The wavelength of emitted light was 670–680 nm at room temperature.

Keywords

DOUBLE HETEROSTRUCTURES
TO 680 NM WAVELENGTH
SEMICONDUCTOR
GAXIN1-XASYP1-Y DH VISIBLE LED
LPE
670
(100) GAAS SUBSTRATES

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Ga x In 1−x As y P 1−y /Ga x′ ,In 1−x′ ,As y′ ,P 1−y′ , DH visible LED grown on (100) GaAs by LPE in the range of 670–680 nm

Abstract

Keywords

Ga _x In _1−x As _y P _1−y /Ga _x′ ,In _1−x′ ,As _y′ ,P _1−y′ , DH visible LED grown on (100) GaAs by LPE in the range of 670–680 nm