2×106 cm2/V s electron mobility by metalorganic chemical vapor deposition with tertiarybutylarsine
- 8 January 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (2) , 208-210
- https://doi.org/10.1063/1.116462
Abstract
We demonstrate the metalorganic chemical vapor deposition (MOCVD) growth of two‐dimensional electron gases (2DEGs) with electron mobilities up to 2.0×106 cm2/V s at 0.3 K. These are the highest mobilities to date for MOCVD materials, and were achieved using a safer replacement precursor for arsine, tertiarybutylarsine (TBA). For structures grown using arsine, we obtained a maximum mobility of 1.0×106 cm2/V s, which although comparable to the best by MOCVD to date, is half that obtained using TBA. Our studies on thick GaAs and AlGaAs layers indicate that the use of TBA in place of arsine reduces both the carbon and donor impurity concentrations. Thus, TBA is not only a safe alternative to arsine, but also produces significantly purer films.Keywords
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