Depth profile of vacancy-type defects in B+-implanted Si with a SiO2 overlayer by a variable-energy positron beam
- 4 July 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (1) , 25-27
- https://doi.org/10.1063/1.100569
Abstract
A variable‐energy positron beam technique has been used to probe the vacancy‐type defects in Si with a 43‐nm‐thick SiO2 layer induced by B+ implantation with the energy of 80 keV. From the measurements of line shape parameters as a function of incident positron energy, it was found that defects in the Si substrate are distributed in a parabolic form with the average depth shallower by 27% than the projected range of B+ ions for the specimen with a dose of 5×1012 B/cm2 and that defects are accumulated in large quantities at the SiO2 /Si interface for the specimen with higher doses.Keywords
This publication has 10 references indexed in Scilit:
- SiO2/Si interface probed with a variable-energy positron beamApplied Physics Letters, 1987
- Hydrogen-implantation-induced damage in siliconPhysical Review B, 1987
- Profiling multilayer structures with monoenergetic positronsPhysical Review B, 1987
- Variable-energy positron-beam studies of Ni implanted with HePhysical Review B, 1986
- Near-surface defect profiling with slow positrons: Argon-sputtered Al(110)Physical Review B, 1985
- A study of agglomeration and release processes of helium implanted in nickel by a variable energy positron beamJournal of Nuclear Materials, 1985
- Transmission of 1 - 6-keV positrons through thin metal filmsPhysical Review A, 1982
- Defect Structures below the Surface in Metals Investigated by Monoenergetic PositronsPhysical Review Letters, 1982
- Effect of doping and thermal vacancies on positron annihilation in semiconductorsApplied Physics B Laser and Optics, 1979
- Recoil contribution to ion-implantation energy-deposition distributionsJournal of Applied Physics, 1975