Optical Detection of Multiple-Trapping Relaxation in Disordered Crystalline Semiconductors

3 May 1982

journal article
research article
Published by American Physical Society (APS) in Physical Review Letters

Vol. 48 (18) , 1277-1280
https://doi.org/10.1103/physrevlett.48.1277

Abstract

Relaxation of optically excited carriers within localized continuum states in heavily doped crystalline GaAs is directly observed by picosecond luminescence experiments. The relaxation within localized states takes place via thermally activated multiple trapping. Saturation of the relaxation is observed at high temperatures and for small trap densities. The results demonstrate that heavily doped crystalline semiconductors can serve as a simple model for amorphous materials.

Keywords

AMORPHOUS MATERIAL

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