Mobility in 6H-SiC n-Channel MOSFETs

• 10 May 2000
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 338-342, 1121-1124
• https://doi.org/10.4028/www.scientific.net/msf.338-342.1121

Abstract

Keywords

• INTERFACE STATES (OR TRAPS)
• METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET)
• MOBILITY DEGRADATION COEFFICIENT
• OXIDE CHARGE
• STRESS EFFECTS