70 GHz integrated silicon oscillator
- 21 July 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (15) , 977-978
- https://doi.org/10.1049/el:19880666
Abstract
Planar oscillators on highly insulating silicon substrate with a disc resonator were fabricated. The active element was an IMPATT diode made from SI MBE material. A maximum CW output power of 200 mW with an efficiency of 4.5% at 73 GHz has been obtained.Keywords
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- Silicon millimeter-wave circuits for receivers and transmittersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003