A GaAs Bi-FET technology for large scale integration
- 7 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 389-392
- https://doi.org/10.1109/iedm.1989.74304
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Theory of a Wide-Gap Emitter for TransistorsProceedings of the IRE, 1957