Formation of coherent superdots using metal-organic chemical vapor deposition

Publisher Website
Google Scholar
Abstract
We demonstrate direct growth of electronically coupled zero‐dimensional structures forming a super‐quantum dot using metal‐organic chemical vapor deposition. After the first sheet with InGaAs pyramids is formed on GaAs surface, alternate short‐period GaAs‐InGaAs deposition leads to spontaneous formation of layered structures driven by the energetics of Stranski–Krastanow growth. As a result columnlike InGaAs structures each having a characteristic lateral size of ∼23 nm at the top and composed of many closely packed InGaAs parts are formed. The full width at half maximum of superdot luminescence of 28 meV at 8 K indicates good average uniformity of the superdot ensemble. Absorption is found to be resonant with luminescence.

This publication has 0 references indexed in Scilit: