High-power 11 GHz GaAs hi-lo Impatt diodes with titanium Schottky barriers
- 4 January 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (1) , 13-15
- https://doi.org/10.1049/el:19790010
Abstract
Schottky-barrier hi-lo GaAs Impatt diodes with Ti-Pt-Au contacts have been fabricated for the 10.7–11.7 GHz band. At 180°C junction temperature rise the diodes have produced over 5 W of output power and up to 24% efficiency from an 11 GHz oscillator. Initial life tests show potential for high reliability.Keywords
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