Growth of gallium arsenide on hydrogen passivated Si with low-temperature treatment (∼600 °C)
- 29 April 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (17) , 1887-1889
- https://doi.org/10.1063/1.105063
Abstract
Epitaxial growth of GaAs on Si commonly employs a high-temperature (≳850 °C) oxide desorption step. In this letter, we report the first epitaxial growth of GaAs on Si without the need for this high-temperature treatment. This method utilizes a final HF treatment whereby the Si surface dangling bonds are terminated by hydrogen with a resultant (1×1) bulk-like surface structure. Upon medium temperature heat treatment (×500 °C), hydrogen leaves the surface leading to the common orthogonal 2×1 surface reconstruction. High quality GaAs epitaxial layers were successfully grown on these 2×1 reconstructed Si surfaces with the pregrowth substrate preparation temperatures of as low as 600 °C.Keywords
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