Sputtering Ion Source for Solids

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Abstract
A new ion source for the analysis of solids has been constructed. The ions are sputtered from the surface of the sample target by bombarding it with a concentrated beam of argon ions. The bombarding beam has an energy of 10 to 12 kV and an intensity of about 1 mA. This large intensity produces a secondary beam of target ions of about 10−8 A which is quite adequate for a routine analysis. In contrast to a spark source, the sputtering source gives very stable operation and allows electrometric recording of the mass spectrum. The mass spectra obtained are very simple and consist of peaks representing singly charged species. The source is not limited to metals or semiconductors, since good mass spectra have been obtained from insulators.