Determination of the band-edge offset in heterojunctions by electron beam induced current (GaAs/GaAlAs)
- 1 June 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (22) , 1583-1585
- https://doi.org/10.1063/1.97787
Abstract
The electron beam induced current generated at a GaAs/Ga0.48Al0.52As heterojunction was investigated as a function of externally applied bias. In the absence of interface charge the flatband voltage was determined and the band-edge offset evaluated. For the valence-band-edge offset 5.5 meV/% Al was obtained.Keywords
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