Tensile stress variations of chemically etched GaAs films grown on Si substrates
- 12 December 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (24) , 2394-2396
- https://doi.org/10.1063/1.100241
Abstract
Photoluminescence (PL) at 77 K is used to study tensile stress variations in chemically etched stripes of a 3-μm-thick GaAs film grown on Si substrate. The etched patterns consist of 1-mm-long stripes with widths ranging from 100 to 4 μm and 4 μm by 4 μm squares. We observed monotonic shift of PL peaks towards shorter wavelength for decreasing stripe width. In particular, when the width of the stripe is less than 7 μm, tensile stress is essentially uniaxial as evident from the magnitude of shift in PL peaks. The polarization characteristics of the PL spectra of these uniaxially stressed stripes are investigated and found to agree well with theoretical predictions.Keywords
This publication has 11 references indexed in Scilit:
- Electro-optical effects of externally applied 〈100〉 uniaxial stress on InGaAsP 1.3 and 1.5 μm injection lasersApplied Physics Letters, 1988
- Stress variations and relief in patterned GaAs grown on mismatched substratesApplied Physics Letters, 1988
- Characterization of GaAs film grown on Si substrate by photoluminescence at 77 KApplied Physics Letters, 1988
- Photoluminescence studies of selective-area molecular beam epitaxy of GaAs film on Si substrateApplied Physics Letters, 1988
- Stress variations due to microcracks in GaAs grown on SiApplied Physics Letters, 1987
- Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealingApplied Physics Letters, 1986
- Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on SiSolid State Communications, 1986
- Injection-Enhanced Dislocation Glide under Uniaxial Stress in GaAs–(GaAl)As Double Heterostructure LaserJapanese Journal of Applied Physics, 1977
- Piezo-Electroreflectance in Ge, GaAs, and SiPhysical Review B, 1968
- THE EFFECT OF UNIAXIAL STRAIN ON THE THRESHOLD CURRENT AND OUTPUT OF GaAs LASERSApplied Physics Letters, 1963