High performance Be+implanted InSb photodiodes

• 1 January 1981
• proceedings article
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• p. 161-164
• https://doi.org/10.1109/iedm.1981.190028

Abstract

Keywords

• PHOTODIODES
• STANDARD DEVIATION
• QUANTUM EFFICIENCY
• ETCHING
• DIODES
• ION IMPLANTATION