Hybrid ferromagnetic/semiconductor Hall effect device
- 15 July 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (3) , 357-359
- https://doi.org/10.1063/1.121833
Abstract
The diffusive classical transport of a two-dimensional electron gas (2DEG) in a Hall cross, subjected to a locally inhomogeneous magnetic field resulting from an in plane magnetized ferromagnetic film deposited above the 2DEG, is investigated. The magnetic field profile in the 2DEG is obtained analytically and the Hall resistance is calculated for various configurations. Our results are in good agreement with the recent experimental results of Johnson et al. [Appl. Phys. Lett. 71, 974 (1997)] on a novel magnetoelectronic device. The output of the device scales inversely with both the size of the voltage and the current probes.Keywords
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