Effect of substrate temperature on composition ratio x in molecular-beam-epitaxial GaAs1−xPx
- 1 September 1976
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (9) , 4198-4200
- https://doi.org/10.1063/1.323288
Abstract
GaAs1−xPx crystals were grown by molecular‐beam epitaxy with parametric variation of substrate temperature Ts (540–580 °C) and of the ratio of beam intensity of P to that of As (2–11). The rate of decrease of composition ratio x with temperature, −dx/dTs, is 0.003 °C−1 for all ratios of beam intensity. The sticking coefficient of P is found to vary inversely proportional to the substrate temperature in this temperature range. This fact indicates the possibility of writing two‐dimensional patterns on the surface by a partial temperature rise.This publication has 5 references indexed in Scilit:
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- Characterization and Substrate-Temperature Dependence of Crystalline State of GaAs Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1975
- Molecular beam epitaxyProgress in Solid State Chemistry, 1975
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