Spatially and spectrally resolved imaging of GaAs quantum-dot structures using near-field optical technique
- 5 August 1996
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (6) , 827-829
- https://doi.org/10.1063/1.117905
Abstract
We present experimental result on spatially and spectrally resolved imaging of GaAs quantum dot (QD) structures using a near-field optical microscope. Three photoluminescence (PL) peaks which originate from QD, quantum well (QW), and bulk regions were observed at liquid-He temperature. Carriers were observed to diffuse effectively from the AlGaAs barriers to the QD and QW regions. The region of the intension carrier capture manifests itself by emitting a sharp PL peak, and is estimated to be about 300 nm.Keywords
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