Analysis of growth rate of pyrolytic epitaxial GaAs1−xPx
- 1 November 1972
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 16 (2) , 121-122
- https://doi.org/10.1016/0022-0248(72)90102-9
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Vapor Growth of GaAs1-xPxby the Pyrolysis of Ga(CH3)3, AsH3and PH3Japanese Journal of Applied Physics, 1972
- The Ga-GaP-GaAs Ternary Phase DiagramJournal of the Electrochemical Society, 1970
- Dissociation pressures of GaAs, GaP and InP and the nature of III–V meltsJournal of Physics and Chemistry of Solids, 1963