Low dislocation, semi-insulating In-doped GaAs crystals
- 1 December 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 70 (1-2) , 179-184
- https://doi.org/10.1016/0022-0248(84)90265-3
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Direct observation of dislocation effects on threshold voltage of a GaAs field-effect transistorApplied Physics Letters, 1983
- Effects of stoichiometry on thermal stability of undoped, semi-insulating GaAsJournal of Applied Physics, 1982
- A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs CrystalsBell System Technical Journal, 1980