Calculated performance of p+n InP solar cells with In0.52Al0.48As window layers
- 11 November 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (20) , 2555-2557
- https://doi.org/10.1063/1.105951
Abstract
We have calculated the performance of indium phosphide solar cells with lattice matched wide band‐gap In0.52Al0.48As window layers using the PC‐1D computer code. The conversion efficiency of p+n InP solar cells is improved significantly by the window layer. No improvement is seen for n+p structures. The improvement in InP cell efficiency was studied as a function of In0.52Al0.48As layer thickness. The use of the window layer improves both the open circuit voltage and short circuit current. For a typical In0.52Al0.48As window layer thickness of 20 nm, the cell efficiency improves in excess of 27% to a value of 18.74%.Keywords
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