Picosecond Surface Electron Dynamics on Photoexcited Si(111) (2×1) Surfaces
- 18 August 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 57 (7) , 881-884
- https://doi.org/10.1103/physrevlett.57.881
Abstract
Surface electrons were selectively photoexcited into the normally unoccupied antibonding surface state on the cleaved Si(111) (2×1) surface by 2.8-μ m infrared laser radiation. The time decay of the antibonding-state population was then followed in real time by picosecond time-resolved uv photoemission spectroscopy. The relaxation dynamics was found to be cleavage dependent, and appears to be controlled by defects, which give rise to a unique signature in the photoemission spectra.Keywords
This publication has 12 references indexed in Scilit:
- Photoemission study of the antibonding surface-state band on Si(111)2×1Physical Review B, 1985
- Time- and angle-resolved photoemission study of InP(110)Physical Review B, 1985
- Picosecond Time-Resolved Photoemission Study of the InP(110) SurfacePhysical Review Letters, 1985
- Direct Measurement of the Polarization Dependence of Si(111)2×1 Surface-State Absorption by Use of Photothermal Displacement SpectroscopyPhysical Review Letters, 1984
- Differential Reflectivity of Si(111)2×1 Surface with Polarized Light: A Test for Surface StructurePhysical Review Letters, 1984
- Determination of the Fermi-level pinning position at Si(111) surfacesPhysical Review B, 1983
- Electronic surface states at steps in Si(111)2 × 1Surface Science, 1983
- Reconstruction Mechanism and Surface-State Dispersion for Si(111)-(2×1)Physical Review Letters, 1982
- Experimental Evidence for One Highly Dispersive Dangling-Bond Band on Si(111) 2 × 1Physical Review Letters, 1982
- New-Bonded Chain Model for Si(111)-(2×1) SurfacePhysical Review Letters, 1981