Slow relaxation phenomena in ferroelectric-semiconductors
- 1 May 1991
- journal article
- research article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 117 (1) , 157-164
- https://doi.org/10.1080/00150199108222413
Abstract
A model of spontaneous polarization screening where the transient is determined by the ionization time constant of deep impurities is proposed. Slow relaxation of electrophysical characteristics is discussed. Using the concepts presented, the functional dependence of relaxation processes as well as the existence of relaxation time set may be explained.Keywords
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