The realization of the quantum Hall standard of resistance at the BIPM

1 June 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Instrumentation and Measurement

Vol. IM-36 (2) , 234-239
https://doi.org/10.1109/TIM.1987.6312676

Abstract

The first measurements of the quantum Hall resistance at the Bureau International des Poids et Mesures (BIPM) have been carried out using a silicon MOSFET sample at magnetic flux densities up to 13.2 T and at temperatures near 0.5 K. New measurement equipment has been constructed and used to establish an accurate link to the present resistance standard with a relative uncertainty, given as a one-standard-deviation estimate, of 7.6 × 10⁻⁸. The results are 4RH (4) = (25 812.8511 ± 0.0020) Ω69-BI for June 1, 1986. Using the very recently revised value for the relation between Ω69-BI and the Commonwealth Scientific and Industrial Research Organization (CSIRO) determinations of the ohm gives 4RH (4) = (25 812.8087 ± 0.0027) Ω.

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