Isotropic Approximation to the Magnetoresistance of a Multivalley Semiconductor

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Abstract
The magnetoconductivity tensor for a single valley is averaged over all orientations of the valley, giving an isotropic magnetoconductivity tensor. The valley anisotropy can be deduced from the magnetoresistance coefficients of such a model. It is suggested that this model will describe approximately the magnetoresistance phenomena of a polycrystalline multivalley semiconductor. It is also shown that the results of the calculation provide a means for determining the valley anisotropy of a multivalley semiconductor from magnetoresistance data without the use of a detailed model of the band structure.