Gas Identification by a Single Gas Sensor using Porous Silicon as the Sensitive Material
- 1 October 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (10R) , 5840
- https://doi.org/10.1143/jjap.34.5840
Abstract
The peak frequency of the dielectric loss angle of gas molecules adsorbed in a porous silicon gas sensor having a 2.4 nm pore radius is found to vary inversely proportional to the third power of the gas molecular radius. Peak frequency is extremely sensitive to the pore radius, becoming about one order of magnitude higher for a pore radius of 1 nm. The temperature dependence of the peak frequency in the range of 0 to 25 °C was also determined.Keywords
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