Cavity formation and plastic flow ofa–Si: H during heavy ion bombardment

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Abstract
Irradiation of unsupported samples of hydrogenated amorphous silicon below 100 K with 360-MeV Xe ions results in macroscopically visible changes in sample dimensions. These changes have two different causes. Formation and growth of cavities lead to an isotropic increase of the specimen dimensions and to a drastic decrease of the mass density. Simultaneously plastic flow occurs, which produces additional but anisotropic changes of the specimen dimensions. The dimensions perpendicular to the beam grow whereas the dimension parallel to the ion beam shrinks. Neither effect saturates in the investigated fluence range (Φt< 1014Xe/cm2) and both are absent in crystalline silicon. The effects are most likely provoked by electronic excitations and/or ionizations in the wake of the fast ions. With respect to plastic flow,a–Si:H behaves like metallic and oxide glasses. Formation of cavities and their growth, however, seem to occur only in tetrahedrally coordinated solids.