The fabrication and characterization of large scale integrated field emitter arrays for high current electron sources
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1007-1010
- https://doi.org/10.1109/iedm.1995.499387
Abstract
We report on the fabrication and the characteristics of large scale integrated field emitter arrays (FEAs) containing six million emitters. Our FEAs have a unique structure having a thermal-oxidized SiO/sub 2/ film as an insulator layer which separates the gate electrodes from the silicon cathode substrate. An anode current of 63.8 mA at 58.7 V has been obtained in the six million field emitters. This is one of the highest values reported in the world to date. From the FEA characteristics we have estimated a variation of the radius of curvature of the emitter tips. This variation has been found to be within 6.4 nm /spl plusmn/1.05 nm.Keywords
This publication has 2 references indexed in Scilit:
- Silicon Field Emitter Capable of Low Voltage EmissionJapanese Journal of Applied Physics, 1993
- The Field Emitter: Fabrication, Electron Microscopy, and Electric Field CalculationsJournal of Applied Physics, 1953