I-V & C-V characteristics of ferroelectric lead germanate on silicon
- 1 November 1983
- journal article
- research article
- Published by Taylor & Francis in Ferroelectrics
- Vol. 50 (1) , 117-122
- https://doi.org/10.1080/00150198308014440
Abstract
The ferroelectric properties of lead germanate film on silicon substrates seemed to be influenced by the nature of the interface. I-V studies revealed the formation of an iso-type n-n+ hetero - junction at low voltages, exhibiting two types of conduction: generation-recombination followed by tunneling. C-V studies show a hysteresis indicating a nonvolatile memory behavior.Keywords
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