Study of cathodoluminescence spectroscopy of aluminum nitride
- 13 September 1996
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 2877, 42-46
- https://doi.org/10.1117/12.250938
Abstract
The cathodoluminescence (CL) measurements of carbon doped and undoped aluminum nitride (AlN) thin films near the band- edge region were performed at temperatures of 300, 77 and 4.2 K. These films were grown on three different substrates sapphire, 6H-SiC and 4H-SiC. The typical thickness of these films was in the range of 0.35 - 0.4 micrometer. Two distinct peaks 'A' and 'B' were observed in undoped samples around 6.1 and 5.9 eV, respectively. Also, there is an expected peak within the low energy side of peak 'B.' The absorption spectra of different carbon doped AlN on sapphire substrate were carried out to study the Urbach tail's parameters which play an important role near the band-edge transitions.Keywords
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