Metamorphic InyGa1−yAs/InzAl1−zAs heterostructure field effect transistors grown on GaAs(001) substrates using molecular-beam epitaxy
- 1 March 1990
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 8 (2) , 301-304
- https://doi.org/10.1116/1.585057