Dislocation Free Island Formation in Heteroepitaxial Growth: An Equilibrium Study

Preprint

17 October 1997

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/9710170

Abstract

We investigate the equilibrium properties of strained heteroepitaxial systems, incorporating the formation and the growth of a wetting film, dislocation free island formation, and ripening. The derived phase diagram provides a detailed characterization of the possible growth modes in terms of the island density, equilibrium island size, and wetting layer thickness. Comparing our predictions with experimental results we discuss the growth conditions that can lead to stable islands as well as ripening.

Keywords

DISLOCATION FREE ISLAND
HETEROEPITAXIAL GROWTH
FREE ISLAND FORMATION
EQUILIBRIUM STUDY

All Related Versions

Version 1, 1997-10-17, ArXiv
Published version: Physical Review Letters, 79 (19), 3708.

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