Advanced Quality in Epitaxial Layer Transfer by Bond and Etch-back of Porous Si
- 1 February 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (2S)
- https://doi.org/10.1143/jjap.35.973
Abstract
We report recent qualitative advances in bonding and etch-back of silicon on insulator (SOI) using structure-sensitive selective etching of porous Si. The defect density in the epitaxial layer grown on the porous Si is lowered to 3.5×102/cm2 by raising the H2 prebake temperature in conjunction with the “preinjection technique” in which a small amount of Si is supplied during the high-temperature H2 prebake prior to epitaxial growth. H2 annealing also gives a smooth SOI surface comparable to the bulk polished wafer. Improved thickness uniformity of ±1.8% is achieved using the single wafer processing epi-reactor. The electrical characteristics are evaluated by fabricating pn-junction diode.Keywords
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