Current-induced fluorescence quenching in organic light-emitting diodes
- 4 February 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (5) , 874-876
- https://doi.org/10.1063/1.1445271
Abstract
The electroluminescence quantum efficiency of organic light-emitting diodes with a doped Alq [tris(8-quinolinolato)aluminum] emitting layer is found to decrease markedly with increasing current density. This phenomenon was investigated using multilayer device structures permitting bipolar or unipolar carrier transport, and luminescence measurements with simultaneous optical and electrical excitation. The loss of electroluminescence quantum efficiency is attributed to the quenching of the singlet-excited state of the dopant by a cationic species.Keywords
This publication has 16 references indexed in Scilit:
- Transient analysis of organic electrophosphorescence. II. Transient analysis of triplet-triplet annihilationPhysical Review B, 2000
- Excitonic singlet-triplet ratio in a semiconducting organic thin filmPhysical Review B, 1999
- Degradation Mechanism of Small Molecule-Based Organic Light-Emitting DevicesScience, 1999
- Fluorescence quenching induced by injected carriers in organic thin filmsThin Solid Films, 1998
- Improved red dopants for organic electroluminescent devicesMacromolecular Symposia, 1998
- Electric field-induced photoluminescence quenching in thin-film light-emitting diodes based on poly(phenyl-p-phenylene vinylene)Synthetic Metals, 1995
- Photoluminescence Quenching under Reverse Bias in Organic Multilayer Structure Utilizing 8-Hydroxyquinoline Aluminum and Aromatic DiamineJapanese Journal of Applied Physics, 1994
- Photoluminescence quenching in a polymer thin-film field-effect luministorJournal of Applied Physics, 1992
- Electroluminescence of doped organic thin filmsJournal of Applied Physics, 1989
- Electroluminescence in Organic Films with Three-Layer StructureJapanese Journal of Applied Physics, 1988