Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots

Preprint

16 October 2006

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0610436

Abstract

A systematic variation of the exciton fine-structure splitting with quantum dot size in single InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition is observed. The splitting increases from -80 to as much as 520 $\mu$eV with quantum dot size. A change of sign is reported for small quantum dots. Model calculations within the framework of eight-band k.p theory and the configuration interaction method were performed. Different sources for the fine-structure splitting are discussed, and piezoelectricity is pinpointed as the only effect reproducing the observed trend.

Keywords

CHEMICAL VAPOR DEPOSITION
FINE STRUCTURE SPLITTING
INAS/GAAS QUANTUM DOTS
STRUCTURE SPLITTING
QUANTUM DOTS
DOT SIZE
EXCITON

All Related Versions

Version 1, 2006-10-16, ArXiv
Published version: Physical Review Letters, 95 (25), 257402.

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