Electron-beam-pumped semiconductor laser using a gas plasma gun (GPG)
- 15 July 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (2) , 102-103
- https://doi.org/10.1063/1.1654798
Abstract
A simple gaseous plasma electron beam source for electron‐bombardment excitation of semiconductor lasers is described. The gas plasma gun (GPG) is capable of electron beam energies (> 50 keV) and current densities (adjustable with magnetic field) sufficient to produce laser operation of homogeneous semiconductor samples, as is demonstrated on GaAs1−xPx (x = 0.37, 77°K).Keywords
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