Near field scanning optical microscopy measurements of optical intensity distributions in semiconductor channel waveguides

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Abstract
We present results of near field scanning optical microscopy measurements performed on single mode AlGaAs ridge channel waveguides. The optical intensity distribution just above the surface of the waveguide structure has been measured by scanning a tapered, aluminum‐coated, fiber probe transverse to the waveguide propagation direction. Experimental results are compared with model calculations performed using both the effective index and beam propagation methods. An accurate description of submicron features in the intensity profile near the ridge edges, as well as the magnitude of the field outside the channel, requires the use of the beam propagation method.