Two-dimensional dopant profiling of a 60 nm gate length nMOSFET using scanning capacitance microscopy
- 28 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 555-558
- https://doi.org/10.1109/iedm.1998.746419
Abstract
It is now possible using scanning capacitance microscopy to directly obtain a two-dimensional profile of the doping in MOSFETs with gate lengths greater than 60 nm. We have accomplished this using highly doped, ultrasharp silicon cantilevers with a tip diameter of less than 10 nm. These tips provide images with very little voltage dependence (over a 1-2 V range), and improved resolution (30-50 nm resolution.Keywords
This publication has 2 references indexed in Scilit:
- Junction delineation of 0.15 μm MOS devices using scanning capacitance microscopyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low leakage, ultra-thin gate oxides for extremely high performance sub-100 nm nMOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002