Quasi-steady-state photoconductance, a new method for solar cell material and device characterization

1 January 1996

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 01608371,p. 457-460
https://doi.org/10.1109/pvsc.1996.564042

Abstract

This paper describes a new method for minority-carrier lifetime determination using a contactless photoconductance instrument in a quasi-steady-state mode. Compared to the more common transient photoconductance decay approach, the new technique permits the use of simpler electronics and light sources, yet has the capability to measure lifetimes in the nanosecond to millisecond range. In addition, by analyzing the quasi-steady-state photoconductance as a function of incident light intensity, an implicit I/sub SC/-V/sub OV/ curve can be obtained for noncontacted silicon wafers and solar cell precursors.

Keywords

PHOTOCONDUCTING MATERIALS
PHOTOCONDUCTING DEVICES
PHOTOVOLTAIC CELLS
PHOTOCONDUCTIVITY
STEADY-STATE
SILICON
PULSE MEASUREMENTS
LIGHTING
SPONTANEOUS EMISSION
EQUATIONS

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