Effects of photoinduced hole doping on transport properties of YBa2Cu3Oy grain boundary junctions

15 September 1994

journal article
research article
Published by AIP Publishing in Journal of Applied Physics

Vol. 76 (6) , 3679-3683
https://doi.org/10.1063/1.357432

Abstract

The effects of photoinduced hole doping on the electrical characteristics of grain boundary weak link junctions based on high T_c YBa₂Cu₃O_y thin films are investigated. Visible light illumination induces a substantial enhancement in the critical current I_c of approximately 20%–40% even at temperatures well below T_c. The I_c enhancement is accompanied by a clear decrease in the junction resistance R_N which can be explained by the photoinduced hole doping of the degraded regions with oxygen deficiency and/or disorder near the grain boundary. It is also demonstrated that photoinduced hole doping provides a way of improving the I_cR_N product and also a way of controlling the I_c value in situ in these weak link junctions.

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