Al and Ga contributions to the density of states ofAs
- 15 September 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 40 (8) , 5780-5783
- https://doi.org/10.1103/physrevb.40.5780
Abstract
The total valence-band density of states (DOS) and local Al s and Ga s contributions are calculated for As by use of the coherent-potential approximation within an empirical tight-binding framework. In agreement with recent spectroscopic measurements, the central peak (near -7 eV) in the Al s local DOS sharpens continuously with increasing Al concentration, while the analogous peak in the total DOS broadens nonmonotonically. A similar continuous sharpening of the Ga s peak indicates a strong asymmetry between the substitution of Al in GaAs and Ga in AlAs.
Keywords
This publication has 12 references indexed in Scilit:
- Breakdown of the virtual-crystal approximation inGe2x(GaAs)1−xPhysical Review B, 1988
- Molecular coherent-potential approximation for zinc-blende pseudobinary alloysPhysical Review B, 1987
- Valence band offset in AlAs/GaAs heterojunctions and the empirical relation for band alignmentJournal of Vacuum Science & Technology B, 1985
- Long-Range Order inPhysical Review Letters, 1985
- Effects of Chemical and Structural Disorder in Semiconducting Pseudobinary AlloysPhysical Review Letters, 1984
- Electronic structure ofPhysical Review B, 1983
- A Semi-empirical tight-binding theory of the electronic structure of semiconductors†Journal of Physics and Chemistry of Solids, 1983
- Electronic structure of pseudobinary semiconductor alloys , , andPhysical Review B, 1981
- Valence and core level photoemission spectra of AlxGa1−xAsSolid State Communications, 1978
- Simplified Impurity CalculationPhysical Review B, 1954