Abstract
The total valence-band density of states (DOS) and local Al s and Ga s contributions are calculated for Alx Ga1xAs by use of the coherent-potential approximation within an empirical tight-binding framework. In agreement with recent spectroscopic measurements, the central peak (near -7 eV) in the Al s local DOS sharpens continuously with increasing Al concentration, while the analogous peak in the total DOS broadens nonmonotonically. A similar continuous sharpening of the Ga s peak indicates a strong asymmetry between the substitution of Al in GaAs and Ga in AlAs.