Negative transconductance in a resistive gate metal-semiconductor field-effect transistor
- 8 May 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (19) , 1884-1886
- https://doi.org/10.1063/1.101230
Abstract
Negative transconductance is reported in a resistive gate metal‐semiconductor field‐effect transistor (MESFET) for the first time. The negative transconductance arises as a result of the negative differential mobility of electrons in the GaAs channel, and is adequately described by a simple equivalent circuit model. The experimental device is fabricated with a planar ion‐implanted MESFET process, and shows promise as a microwave signal source for use in monolithic microwave integrated circuits.Keywords
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