Correlation of pulsed m.o.s. capacitor measurements with oxidation induced defects

17 February 1977

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 13 (4) , 93-94
https://doi.org/10.1049/el:19770065

Abstract

Large variations have been observed between pulsed capacitor relaxation-time measurements made on samples which have received identical processing. This effect has been studied with 1 mm-diameter m.o.s. capacitors on (100)-orientation Czochralski silicon wafers. The measured relaxation times are related to process-induced defects, particularly oxidation-induced stacking faults.

Keywords

RELAXATION TIME
STACKING FAULTS
OXIDATION INDUCED DEFECTS
PULSED MOS CAPACITOR MEASUREMENTS
CZOCHRALSKI SI WAFERS