Resonant tunnelling in AlInas/GaInAs double barrier diodes grown by MOCVD

4 February 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (3) , 187-188
https://doi.org/10.1049/el:19880124

Abstract

AlInAs/GaInAs double barrier resonant tunnelling structures have been grown by metal-organic chemical vapour deposition and show peak/valley current ratios as high as 3.3:1 at 293 K and 15.3:1 at 77 K. The devices also exhibit current bistability similar to that observed in other materials systems.

Keywords

DOUBLE BARRIER DIODES
CURRENT BISTABILITY
RESONANT TUNNELLING STRUCTURES
MOCVD
ALINAS-GAINAS
MICROWAVE OPERATION
HIGH SPEED DEVICES
NDR
77 TO 293 K
III-V SEMICONDUCTORS
NEGATIVE DIFFERENTIAL RESISTANCE
METAL-ORGANIC CHEMICAL VAPOUR DEPOSITION

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