Surface studies during growth of Si1−xGex/Si from gaseous Si and Ge hydrides

• 1 May 1993
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
• Vol. 11  (3) , 1073-1076
• https://doi.org/10.1116/1.587010

Abstract

Keywords

• REACTION KINETICS
• ELECTRON DIFFRACTION
• PHYSICAL PROPERTIES
• CRYSTAL STRUCTURE
• MOLECULAR BEAM EPITAXY
• EPITAXIAL GROWTH
• SURFACE RECONSTRUCTION
• MATERIALS SCIENCE
• THREE DIMENSIONAL
• CRYSTAL GROWTH
• OSCILLATIONS