Crystallographic Etching Phenomenon during Plasma Etching of SiC (100) Thin Films in SF 6

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Abstract
Crystallographic faceting of unmasked monocrystalline (100) thin film surfaces during plasma etching in has been observed using scanning electron microscopy. Although the faceting produced a rough surface, Auger electron spectroscopy showed it to be very chemically clean, having less native oxide than unetched . The facets were determined to be {210} planes using a combination of selected area channeling and small angle tilt measurements. The facet nucleation appears to be surface sensitive and is caused by either crystal defects or compounds formed by reaction of with adsorbed gases on the sample and chamber wall. It is proposed that the subsequent facet growth is due to a surface reconstruction that causes the {210} planes to etch slower.

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